RT @clarissaconvert: Check-out our work featured in @NatureElectron Transistors never stop revealing new amazing functionalities! https://t…
Check-out our work featured in @NatureElectron Transistors never stop revealing new amazing functionalities!
World’s smallest DRAM cell announced by @IBMResearch Zurich colleagues #ClarissaConvertino, #CezarZota and #SiegfriedKarg promises low-power memory in future mobile devices. More https://t.co/iTcR4uUgTO Article in Nature Electronics https://t.co/xhpZn5xcRa
RT @NatureElectron: Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gall…
RT @NatureElectron: Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gall…
RT @NatureElectron: Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gall…
Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gallium arsenide, can be scaled down to a gate length of 14 nm https://t.co/XnZBW0EJZL https://t.co/Szs77UEdC8