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Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

Overview of attention for article published in Nature Electronics, August 2019
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  • In the top 25% of all research outputs scored by Altmetric
  • High Attention Score compared to outputs of the same age (87th percentile)
  • Good Attention Score compared to outputs of the same age and source (65th percentile)

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