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Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide ransistors #npjcompumats https://t.co/NjZGORf4K9 https://t.co/7HqRrp0P6i
Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide ransistors #npjcompumats https://t.co/NjZGORf4K9 https://t.co/7HqRrp0P6i